A Study on the Wide Frequency Range Electrical Variables in the Al/Coumarin–PVA/p-Si Diodes at Room Temperature

Coumarin-PVA is deposited onto p-Si wafers using the spin coating technique. I examined fundamental electrical variables of Al/CoumarinPVA/p-Si type Schottky barrier diodes (SBDs), by utilizing capacitance/voltage(C-V) and conductance/voltage (G-V) measurements at different frequencies varied from 10kHz to1MHz. have thoroughly explored how CoumarinPVA interlayer, series resistance (Rs) surface states (Nss) affect properties SBDs. In order to remove Rs's influence on observed C G values, corrected them. The high values C/G measured low result existence interfacial states. There evidence that while NA decreases exponentially with increasing frequency, B increases exponentially. A particular distribution Nss density, polarization processes, an layer can all contribute explaining these characteristic features According experimental findings, conclude polymer as well Rs also a significant impact C/G-V quantities